turn-off thyristor

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    可关断晶闸管;可关断可控硅元件

数据更新时间:2026-04-18 14:18:08
1、

The advance in Power Devices and the Latest Turn-off thyristor

功率器件发展及新型可关断晶闸管

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2、

To the measurement of turn-off time of thyristor, the author puts forward a new approach based on the analysis of the traditional approach as well as on the study of the turn-off characteristic and turn-off pattern of thyristor.

本文简要介绍了晶闸管的关断特性和关断方式,并通过对晶闸管关断时间传统测量方法进行分析,提出了晶闸管关断时间测量的新方案。

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3、

We researched mainly on Gate Turn-off Thyristor in qualitative analysis before.

以往对门极可关断晶闸管电流放大系数的研究主要集中在定性分析。

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4、

Meanwhile, establish a mathematical model and simulation model of the reverse recovery characteristics of the thyristor, understand the fundamental principles of the turn-off of the thyristor.

同时,对晶闸管的反向恢复特性进行了数学模型和仿真模型的建立,从根本上理解了晶闸管的关断原理。

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5、

Study of power gate turn-off thyristor

大容量门极可关断晶闸管的研究

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6、

High Power Gate Turn-Off Thyristor ( GTO)

大功率可关断晶闸管(GTO)

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7、

Gate turn of-thyristor chopper of static auxiliary system of metro No 1 is replaced by high voltage insulated gate bipolar transistor ( HVIGBT) chopper, which is presented in this article, to realize the home manufacture of static auxiliary system.

阐述了在地铁一号线车辆静止辅助系统中采用高压绝缘栅双极型晶体管(HVIGBT)斩波器替代门极可关断晶闸管(GT0)斩波器,以实现静止辅助系统的国产化。

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8、

The simulation and experimental verify the theoretical analysis, show that the the inverter can output stability voltage and turn-off thyristor will not be mistaken.

通过仿真和实验验证了理论分析,表明逆变器能输出稳定的电压和晶闸管不会出现误关断。

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9、

Gate commutated thyristor ( GCT) is a new high power semiconductor devices based on Gate turn-off thyristor ( GTO), GCT has extensive application foreground and it is a blank in interiorly now.

门极换流晶闸管(GCT)是在GTO的基础上开发的一种新型大功率半导体器件,有广阔应用的前景,目前在国内尚属空白。

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10、

The Emitter Turn-off ( ETO) thyristor is one of the novel high power devices.

发射极关断晶闸管(ETO)是满足高性能电能变换技术要求的新型大功率电力电子器件。

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11、

When a new clean AC power supply is designed, it is very necessary to know the relationship between the equivalent induction and the thyristor turn-on angle.

在设计新型交流净化电源时,掌握等效电感和双向晶闸管延迟导通角之间的关系很重要。

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